PART |
Description |
Maker |
KDR393S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
KDR720S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR411 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
TCMBR10200CT TCMBR10100CT TCMBR10150CT |
10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
1SS351-TB-E |
Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP
|
ON Semiconductor
|
KDR400S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION, SWITCHING SUPPLY)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
YG862C15R |
High Voltage Schottky barrier diode
|
Fuji Electric
|